irfi3205 hexfet ? power mosfet pd - 9.1374b s d g v dss = 55v r ds(on) = 0.008 i d = 64a l advanced process technology l ultra low on-resistance l isolated package l high voltage isolation = 2.5kvrms ? l sink to lead creepage dist. = 4.8mm l fully avalanche rated to-220 fullpak parameter typ. max. units r jc junction-to-case CCC 2.4 c/w r ja junction-to-ambient CCC 65 c/w thermal resistance fifth generation hexfets from international rectifierutilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. the moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. this isolation is equivalent to using a 100 micron mica barrier with standard to-220 product. the fullpak is mounted to a heatsink using a single clip or by a single screw fixing. 8/25/97 description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 64 i d @ t c = 100c continuous drain current, v gs @ 10v 45 a i dm pulsed drain current ?? 390 p d @t c = 25c power dissipation 63 w linear derating factor 0.42 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 480 mj i ar avalanche current ?? 59 a e ar repetitive avalanche energy ? 6.3 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings downloaded from: http:///
irfi3205 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.057 CCC v/c reference to 25c, i d = 1ma ? r ds(on) static drain-to-source on-resistance CCC CCC 0.008 v gs = 10v, i d = 34a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 42 CCC CCC s v ds = 25v, i d = 59a ? CCC CCC 25 a v ds = 55v, v gs = 0v CCC CCC 250 v ds = 44v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 170 i d = 59a q gs gate-to-source charge CCC CCC 32 nc v ds = 44v q gd gate-to-drain ("miller") charge CCC CCC 74 v gs = 10v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 14 CCC v dd = 28v t r rise time CCC 100 CCC i d = 59a t d(off) turn-off delay time CCC 43 CCC r g = 2.5 t f fall time CCC 70 CCC r d = 0.39 , see fig. 10 ?? between lead, CCC CCC 6mm (0.25in.)from package and center of die contact c iss input capacitance CCC 4000 CCC v gs = 0v c oss output capacitance CCC 1300 CCC v ds = 25v c rss reverse transfer capacitance CCC 480 CCC ? = 1.0mhz, see fig. 5 ? c drain to sink capacitance CCC 12 CCC ? = 1.0mhz nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current pf notes: ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? v dd = 25v, starting t j = 25c, l = 190h r g = 25 , i as = 59a. (see figure 12) ? t=60s, ?=60hz ? i sd 59a, di/dt 290a/s, v dd v (br)dss , t j 175c ? uses irf3205 data and test conditions ? pulse width 300s; duty cycle 2%. source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ?? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 34a, v gs = 0v ? t rr reverse recovery time CCC 110 170 ns t j = 25c, i f = 59a q rr reverse recoverycharge CCC 450 680 c di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) a 64 390 s d g downloaded from: http:///
irfi3205 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 i , d rain-to-s ource current (a) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s pulse width t = 2 5c c a 4.5v 10 100 1000 0.1 1 10 100 4.5v i , d rain-to-source c urrent (a ) d v , drain-to-source voltage (v) ds vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bott om 4.5v 20s p ulse width t = 175c c a 1 10 100 1000 4567891 0 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-s ourc e c urre nt (a ) t = 175c j a v = 2 5 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction tem perature (c ) r , drain -to -s ource o n re sistan ce ds(on) (norm alized) v = 10 v gs a i = 9 8a d t j t j downloaded from: http:///
irfi3205 fig 6. typical gate charge vs. gate-to-source voltage fig 8. maximum safe operating area fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 1000 2000 3000 4000 5000 6000 7000 8000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0v, f = 1 mhz c = c + c , c sho rted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rs s 0 4 8 12 16 20 0 30 60 90 120 150 180 q , total gate charge (nc) g v , g ate-to -sou rce v oltage (v ) gs a for test circuit see fig ure 13 i = 5 9a v = 44 v v = 28 v v = 11 v d dsds ds 10 100 1000 0.6 1.0 1.4 1.8 2.2 2.6 3.0 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , reverse drain cu rren t (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a ) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25 c t = 17 5c single pulse cj downloaded from: http:///
irfi3205 fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
irfi3205 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 1000 1200 25 50 75 100 125 150 175 j e , s ingle pulse avalanche e nergy (m j) as a starting t , junction temperature (c) v = 2 5v i to p 2 4a 42a bottom 59a dd d v ds l d.u.t. v dd i as t p 0.01 r g + - t p v ds i as v dd v (br)dss 10 v fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit downloaded from: http:///
irfi3205 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd ? dv/dt controlled by r g ? driver same type as d.u.t. ? i sd controlled by duty factor "d" ? d.u.t. - device under test d.u.t circuit layout considerations ? low stray inductance ? ground plane ? low leakage inductance current transformer ? * downloaded from: http:///
irfi3205 part number international rectifier lo go example : this is an irf1010 w ith assembly lo t co de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking information to-220 fullpak package outline to-220 fullpak outlinedimensions are shown in millimeters (inches) lea d as signments 1 - ga te 2 - d r ain 3 - so u rc e no te s: 1 dimensio ning & tolerancing pe r a ns i y14.5m, 1982 2 controlling dimension: inch. d c a b minimum creepage distance betw een a -b -c-d = 4.80 (.189) 3x 2.85 (.112) 2.65 (.104) 2.80 (.110) 2.60 (.102) 4.80 (.189) 4.60 (.181) 7.10 (.280) 6.70 (.263) 3.40 (.133) 3.10 (.123) ? - a - 3.70 (.145) 3.20 (.126) 1.15 (.045) m in. 3.30 (.130) 3.10 (.122) - b - 0.90 (.035) 0.70 (.028) 3x 0.25 (.010) m a m b 2.54 (.100) 2x 3x 13.70 (.540) 13.50 (.530) 16.00 (.630) 15.80 (.622) 1 2 3 10.60 (.417) 10.40 (.409) 1.40 (.055) 1.05 (.042) 0.48 (.019) 0.44 (.017) part number international rectifier logo date code (yyw w ) yy = year ww = week assembly lot code e401 9245 irfi840g example : this is an irfi840g w ith assembly lot code e401 a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 8/97 downloaded from: http:///
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ downloaded from: http:///
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